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Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method
Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method
Journal of the Korean Chemical Society. 2000. Jun, 44(3): 200-206
  • Published : June 00, 2000
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Kim, Young-Hoon
Chung, Hye-Young
Cho, Hyo-Yong
Lee, Bo-Young
Yoo, Hak-Do

Abstract
The metal impurities in specific regions at near surface of silicon wafer were determined by constant depth etching��lt is possible to etch uniformly over the entire wafer surface by 1$\mu\textrm{m}$ depth with 5 mL of etching solution made up of HF and HNO$_3$ mixed by l:3 volume ratio. The microwave oven was used to evaporate the solution after etching. After spiking, The recoveries of Cu, Ni, Zn, Cr, Mg and K were found to be 99��105%ted in polysilicon region and could be quantified by 1$\mu\textrm{m}$ depth