The metal impurities in specific regions at near surface of silicon wafer were determined by constant depth etching��lt is possible to etch uniformly over the entire wafer surface by 1$\mu\textrm{m}$ depth with 5 mL of etching solution made up of HF and HNO$_3$ mixed by l:3 volume ratio. The microwave oven was used to evaporate the solution after etching. After spiking, The recoveries of Cu, Ni, Zn, Cr, Mg and K were found to be 99��105%ted in polysilicon region and could be quantified by 1$\mu\textrm{m}$ depth
Citing 'Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method
'
@article{ JCGMDC_2000_v44n3_200}
,title={Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method}
,volume={3}
, number= {3}
, journal={Journal of the Korean Chemical Society}
, publisher={Korean Chemical Society}
, author={Young-Hoon, Kim
and
Hye-Young, Chung
and
Hyo-Yong, Cho
and
Bo-Young, Lee
and
Hak-Do, Yoo}
, year={2000}
, month={Jun}
TY - JOUR
T2 - Journal of the Korean Chemical Society
AU - Young-Hoon, Kim
AU - Hye-Young, Chung
AU - Hyo-Yong, Cho
AU - Bo-Young, Lee
AU - Hak-Do, Yoo
SN - 1017-2548
TI - Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method
VL - 44
PB - Korean Chemical Society
PY - 2000
ER -
Young-Hoon, K.
,
Hye-Young, C.
,
Hyo-Yong, C.
,
Bo-Young, L.
,
&
Hak-Do, Y.
( 2000).
Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method.
Journal of the Korean Chemical Society,
44
(3)
Korean Chemical Society.
Young-Hoon, K
et al.
2000,
Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method,
Journal of the Korean Chemical Society,
vol. 3,
no. 3,
[1]
K Young-Hoon
,
C Hye-Young
,
C Hyo-Yong
,
L Bo-Young
,
and
Y Hak-Do
,
“Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method”,
Journal of the Korean Chemical Society,
vol. 3,
no. 3,
Jun
2000.
Young-Hoon, Kim
Hye-Young, Chung
Hyo-Yong, Cho
et al.
“Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method”
Journal of the Korean Chemical Society,
3.
3
2000:
Young-Hoon, K
,
Hye-Young, C
,
Hyo-Yong, C
,
Bo-Young, L
,
Hak-Do, Y
Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method.
Journal of the Korean Chemical Society
[Internet].
2000.
Jun ;
3
(3)
Young-Hoon, Kim
,
Hye-Young, Chung
,
Hyo-Yong, Cho
,
Bo-Young, Lee
,
and
Hak-Do, Yoo
,
“Determination of Metal Impurities at Near Surface of Silicon Wafer by Etching Method.”
Journal of the Korean Chemical Society
3
no.3
()
Jun,
2000):
